FGH30S150P datasheet, igbt equivalent, ON Semiconductor

Features and benefits

* High Speed Switching
* Low Saturation Voltage: VCE(sat) =1.85 V @ IC = 30 A
* High Input Impedance
* This Device is Pb−Free and is RoHS Compliant Applic.

Application

The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for ind.

Description

Using advanced field stop trench and shorted−anode technology, ON Semiconductor’s shorted−anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with e.

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